The FDT86246L is an N-channel MOSFET that is mounted on a surface mount device (SMD). The maximum power dissipation of the MOSFET is 1W (Ta), and the drive voltage (Max Rds On, Min Rds On) is 4.5V, 10V.

• Status: Active
• Temperature Range: -55°C to 150°C (TJ)
• Case/Package: SOT-223-4
• Dimension: TO-261-4, TO-261AA
• Drain-Source Breakdown Voltage: 150V
• Continuous Drain Current @ 25°C: 2A (Ta)
• Gate-Source Threshold Voltage: 2.5V @ 250μA
• Max Gate Charge: 6.3nC @ 10V
• Max Input Capacitance: 335pF @ 75V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On @ Id, Vgs: 228 mOhm @ 2A, 10V
• Supply and Demand Status: Balanced
• Quantity Per Package: 4k pcs