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FDU044AN03L

Part No FDU044AN03L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 35A I-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 21A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 118nC @ 10V
Max Input Capacitance 5160pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 3.9 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 204132-FDU044AN03L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDU044AN03L CAD Model

Description

The Fairchild/ON Semiconductor FDU044AN03L is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 30V and continuous drain current of 21A (Ta), 35A (Tc) at 25°C. It has a maximum Rds On of 3.9 mOhm @ 35A, 10V and a gate-source threshold voltage of 2.5V @ 250μA. The maximum input capacitance is 5160pF @ 15V and the maximum gate-source voltage is ±20V. It has a power dissipation of 160W (Tc) and operates in a temperature range of -55°C to 175°C (TJ). The FDU044AN03L is packaged in an IPAK (TO-251) case and is mounted through hole. It is categorized as a discrete semiconductor product and has a medium popularity. and the supply and demand status is balanced.

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