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FDU8586

Part No FDU8586
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 35A I-PAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 48nC @ 10V
Max Input Capacitance 2480pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 77W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-251AA
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1038482-FDU8586
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDU8586 CAD Model

Description

This N-Channel MOSFET technology product is manufactured by Fairchild/ON Semiconductor and has the Win Source Part Number 1038482-FDU8586.

  • Win Source Part Number: 1038482-FDU8586
  • Type: N-Channel MOSFET
  • Power Dissipation: 77W (Tc)
  • Continuous Drain Current: 35A (Tc)
  • Drive Voltage: 4.5V, 10V
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On @ Id, Vgs: 5.5 mOhm @ 35A, 10V
  • Supply and Demand: Sufficient
  • Packaging: Tube/Rail

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.4190 $63.8550
100+ $1.1644 $116.4400
155+ $1.1280 $174.8400
215+ $1.0916 $234.6940
275+ $1.0552 $290.1800
370+ $0.9461 $350.0570
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,312 pieces
In Stock: 6,297 pieces Factory Stock: 15 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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