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FDU8882

Part No FDU8882
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 55A I-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12.6A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 1260pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 55W (Tc)
Maximum Rds On at Id,Vgs 11.5 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-251
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 067116-FDU8882
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDU8882 CAD Model

Description

The Fairchild/ON Semiconductor FDU8882 is an N-channel MOSFET designed for various electronic applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 12.6A
  • Package: TO-251
  • Mounting: Through-hole assembly
  • Ideal for: Power supplies, motor control circuits, and high-speed switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.7600 $63.3600
25+ $4.7263 $118.1575
38+ $4.5784 $173.9792
53+ $4.4306 $234.8218
68+ $4.2827 $291.2236
91+ $3.8404 $349.4764
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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