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FDV303N Fairchild/ON Semiconductor FDV303N real image4168 FDV303N real image4169 FDV303N Real Image1 FDV303N Real Image2 FDV303N Real Image3 FDV303N Real Image4 FDV303N Real Image5 FDV303N Real Image6 FDV303N real image FDV303N label picture
Same model may have multiple batches, images only for reference.
FDV303N Fairchild/ON Semiconductor FDV303N real image4168 FDV303N real image4169 FDV303N Real Image1 FDV303N Real Image2 FDV303N Real Image3 FDV303N Real Image4 FDV303N Real Image5 FDV303N Real Image6 FDV303N real image FDV303N label picture
FDV303N Fairchild/ON Semiconductor FDV303N real image4168 FDV303N real image4169 FDV303N Real Image1 FDV303N Real Image2 FDV303N Real Image3 FDV303N Real Image4 FDV303N Real Image5 FDV303N Real Image6 FDV303N real image FDV303N label picture
Same model may have multiple batches, images only for reference.

FDV303N

Part No FDV303N
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 680MA SOT-23
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 2.3nC @ 4.5V
Max Input Capacitance 50pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 350mW (Ta)
Maximum Rds On at Id,Vgs 450 mOhm @ 500mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 016220-FDV303N
Family Name FDV303N
Introduction Date August 19, 1997
ECCN EAR99
Country of Origin Philippines, Republic of Korea
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Power Management, Portable Devices, Consumer Electronics, Communications & Networking
Ultra Librarian 3D Model Ultra Librarian FDV303N CAD Model

Description

The FDV303N is an N-channel MOSFET from Fairchild/ON Semiconductor. It is designed for use in power management, portable devices, consumer electronics, communications, and networking.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 680mA @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Package: SOT-23
  • Dimension: TO-236-3, SC-59, SOT-23-3
  • Supply and Demand: Sufficient
  • Alternatives: Si1304DL, Si1304DL-E3, Si1304DL-T1-E3

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,315+ $0.0381 $50.1015
2,805+ $0.0357 $100.1385
4,350+ $0.0345 $150.0750
6,250+ $0.0320 $200.0000
8,120+ $0.0308 $250.0960
10,140+ $0.0296 $300.1440
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Availability: 200,000 pieces
MOQ: 1315 pcs
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