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FDW2507NZ

Part No FDW2507NZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 7.5A 8-TSSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7.5A
Maximum Rds On at Id,Vgs 19 mOhm @ 7.5A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 28nC @ 4.5V
Max Input Capacitance 2152pF @ 10V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 1038490-FDW2507NZ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDW2507NZ CAD Model

Description

The FDW2507NZ is a dual N-Channel PowerTrench® MOSFET from Fairchild Semiconductor (now ON Semiconductor), designed for high-efficiency power switching applications. This device features two independent N-channel MOSFETs in a single package, allowing for space-saving designs in synchronous rectification, DC-DC conversion, and other power management circuits. It is optimized for low on-resistance and fast switching speeds.

Applications:

  • Synchronous rectification in isolated DC-DC converters.
  • Primary side switching in DC-DC converters.
  • Load switching.
  • Power management in portable devices.
  • Battery protection circuits.

Features:

  • Dual N-Channel MOSFETs in a single package.
  • Low on-resistance (RDS(on)) to minimize conduction losses.
  • Fast switching speed for high-frequency operation.
  • Low gate charge (Qg) for efficient driving.
  • Surface-mount package for efficient PCB assembly.
  • RoHS compliant.

Benefits:

  • Increased power conversion efficiency due to reduced conduction and switching losses.
  • Improved thermal performance.
  • Reduced component count and board space.
  • Enhanced system reliability.
  • Simplified design and layout.

Additional Details:

The FDW2507NZ typically features a drain-source voltage (VDS) rating of 25V and a continuous drain current (ID) rating that varies depending on the operating temperature and mounting conditions for each channel. The RDS(on) is typically in the milliohm range, contributing to lower power dissipation. The device is packaged in a Dual Cool 8 package. The gate threshold voltage (VGS(th)) is specified to ensure proper turn-on and turn-off characteristics. The device's thermal resistance characteristics are also important for thermal management in power applications. This dual MOSFET offers designers a combination of low on-resistance, fast switching, and efficient thermal performance in a space-saving package with enhanced thermal performance from the Dual Cool package. Its design is tailored to improve power density and efficiency in a variety of modern electronic systems.

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