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Same model may have multiple batches, images only for reference.
FQA11N90_F109 Real Image
Same model may have multiple batches, images only for reference.

FQA11N90_F109

Part No FQA11N90_F109
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 11.4A TO-3P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 94nC @ 10V
Max Input Capacitance 3500pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 960 mOhm @ 5.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1039535-FQA11N90_F109
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQA11N90_F109 CAD Model

Description

The FQA11N90_F109 is a N-Channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Mounting: Through-hole
  • Packaging: TO-3PN
  • Power Dissipation: 300W (Tc)
  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current: 11.4A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 94nC @ 10V
  • Maximum Input Capacitance: 3500pF @ 25V
  • Maximum Rds On: 960 mOhm @ 5.7A, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Applications: Industrial and power management

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Quantity Unit Price Ext. Price
7+ $9.3844 $65.6908
15+ $7.7004 $115.5060
24+ $7.4601 $179.0424
32+ $7.2188 $231.0016
42+ $6.9785 $293.0970
56+ $6.2566 $350.3696
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