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Same model may have multiple batches, images only for reference.
FQA32N20C Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQA32N20C

Part No FQA32N20C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 32A TO-3P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 2220pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 204W (Tc)
Maximum Rds On at Id,Vgs 82 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 067373-FQA32N20C
Popularity Medium
Supply and Demand Status Limited
Quantity per package 450
Ultra Librarian 3D Model Ultra Librarian FQA32N20C CAD Model

Description

The Fairchild/ON Semiconductor 067373-FQA32N20C is an N-channel MOSFET designed for through-hole mounting. The supply and demand status of this product is limited.

  • Power Dissipation (Max): 204W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current (Max): 32A (Tc)
  • Gate Charge (Max): 110nC @ 10V
  • Applications: Wide range of electronic circuits

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14+ $7.1642 $100.2988
22+ $6.9403 $152.6866
30+ $6.7165 $201.4950
39+ $6.4926 $253.2114
52+ $5.8209 $302.6868
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Availability: 3,152 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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