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Same model may have multiple batches, images only for reference.
FQA33N10 Real Image
Same model may have multiple batches, images only for reference.

FQA33N10

Part No FQA33N10
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 36A TO-3P
Datasheet
FQA33N10 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 51nC @ 10V
Max Input Capacitance 1500pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 163W (Tc)
Maximum Rds On at Id,Vgs 52 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 001228-FQA33N10
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQA33N10 CAD Model

Description

The Fairchild/ON Semiconductor FQA33N10 is a MOSFET transistor with N-channel polarity.

  • Power Dissipation (Max): 163W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 36A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge (Max): 51nC @ 10V
  • Input Capacitance (Max): 1500pF @ 25V
  • Rds on (Max): 52 mOhm @ 18A, 10V
  • Package: TO-3P
  • Mounting Type: Through Hole
  • Category: Discrete Semiconductor Product
  • Status: Obsolete (EOL)
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $15.9748 $63.8992
9+ $13.1081 $117.9729
14+ $12.6981 $177.7734
19+ $12.2880 $233.4720
25+ $11.8792 $296.9800
33+ $10.6503 $351.4599
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Availability: 9,000 pieces
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