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Same model may have multiple batches, images only for reference.
FQA6N90C_F109 Real Image
Same model may have multiple batches, images only for reference.

FQA6N90C_F109

Part No FQA6N90C_F109
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 6A TO-3P
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1770pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 198W (Tc)
Maximum Rds On at Id,Vgs 2.3 Ohm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 001230-FQA6N90C_F109
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQA6N90C_F109 CAD Model

Description

The Fairchild/ON Semiconductor FQA6N90C_F109 is an N-channel MOSFET transistor designed to handle high voltage and high current loads.

  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current: 6A @ 25°C
  • Power Dissipation: 198W
  • Maximum Rds On: 2.3 Ohm @ 3A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 40nC @ 10V
  • Maximum Input Capacitance: 1770pF @ 25V
  • Package: TO-3PN
  • Operating Temperature: -55°C to 150°C (TJ)
  • Market Availability: Open Market
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.4782 $50.8692
15+ $6.9565 $104.3475
23+ $6.7391 $154.9993
31+ $6.5217 $202.1727
40+ $6.3044 $252.1760
54+ $5.6522 $305.2188
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Availability: 9,000 pieces
MOQ: 450 pcs
Order Increment : 450 pcs
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