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Same model may have multiple batches, images only for reference.
FQA7N60 Real Image
Same model may have multiple batches, images only for reference.

FQA7N60

Part No FQA7N60
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 600V N-Channel MOSFET
Datasheet
FQA7N60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 38nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1430pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 152W (Tc)
Rds On (Maximum) @ Id, Vgs 1 Ohm @ 3.9A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-3P
Package TO-3P-3, SC-65-3
Win Source Part Number 1175168-FQA7N60
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name FQA7N60
Introduction Date May 15, 2000
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian FQA7N60 CAD Model

Description

The Fairchild/ON Semiconductor FQA7N60 is a MOSFET transistor that is part of the QFET series.

  • Mounting Style: Through-hole
  • Package: TO-3P-3 and SC-65-3
  • Operating Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 152W (Tc)
  • Drain-Source Voltage: 600V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Input Capacitance: 1430pF @ 25Vds
  • Maximum Drain Current: 7.7A (Tc)
  • Rds On: 1 Ohm @ 3.9A and 10Vgs
  • Product Status: Obsolete (EOL)
  • Supply and Demand: Limited
  • Alternative Parts: 2SK1968, 2SK1968-E, and APT11F80B

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