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Same model may have multiple batches, images only for reference.
FQB12N50 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQB12N50

Part No FQB12N50
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 12.1A D2PAK
Datasheet
FQB12N50 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 12.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 51nC @ 10V
Max Input Capacitance 2020pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.13W (Ta), 179W (Tc)
Maximum Rds On at Id,Vgs 490 mOhm @ 6.05A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 204272-FQB12N50
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQB12N50 CAD Model

Description

It is a MOSFET technology with a polarity of N-Channel and a drain-source breakdown voltage of 500V.

  • Continuous Drain Current (25°C): 12.1A (Tc)
  • Max Rds On at Id, Vgs: 490 mOhm @ 6.05A, 10V
  • Mounting: SMD (SMT)
  • Case/Package: D2PAK (TO-263AB)
  • Win Source Part Number: 204272-FQB12N50

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5489 $61.9560
95+ $1.2717 $120.8115
145+ $1.2312 $178.5240
195+ $1.1920 $232.4400
255+ $1.1527 $293.9385
340+ $1.0326 $351.0840
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