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FQB12N60CTM

Part No FQB12N60CTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 600V N-Channel MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Reel - TR
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 63nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2290pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 3.13W (Ta), 225W (Tc)
Rds On (Maximum) @ Id, Vgs 650 mOhm @ 6A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D2PAK (TO-263AB)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1175210-FQB12N60CTM
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name FQB12N60C
Introduction Date October 20, 2003
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian FQB12N60CTM CAD Model

Description

The Fairchild/ON Semiconductor QFET is a MOSFET technology electronic component that comes in a TO-263-3, D2Pak (2 Leads + Tab), TO-263AB package with SMD mounting.

  • Maximum Drain Source Voltage: 600V
  • Drive Voltage: 10V
  • QFET Family: FQB12N60C family
  • Current Continuous Drain: 12A (Tc)
  • Gate Charge (Qg): 63nC @ 10V
  • Input Capacitance (Ciss): 2290pF @ 25V
  • Power Dissipation: 3.13W (Ta), 225W (Tc)
  • Rds On (Maximum) @ Id, Vgs: 650 mOhm @ 6A, 10V
  • Status: obsolete (EOL)
  • Introduction Date: October 20, 2003
  • Manufacturer: Fairchild/ON Semiconductor
  • Specialization: discrete semiconductor products.

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