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Same model may have multiple batches, images only for reference.
FQB2N60TM Real Image
Same model may have multiple batches, images only for reference.

FQB2N60TM

Part No FQB2N60TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2.4A D2PAK / Trans MOSFET N-CH 600V 2.4A 3-Pin(2+Tab) D2PAK T/R
Datasheet
FQB2N60TM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 350pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 3.13W (Ta), 64W (Tc)
Rds On (Maximum) @ Id, Vgs 4.7 Ohm @ 1.2A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D2PAK (TO-263AB)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 774714-FQB2N60TM
Popularity Medium
Supply and Demand Status Balance
Family Name FQB2N60
Introduction Date May 15, 2000
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FQB2N60TM CAD Model

Description

The Fairchild/ON Semiconductor FQB2N60TM is an obsolete MOSFET transistor manufactured by Fairchild/ON Semiconductor.

  • Series: QFET
  • Package: TO-263-3, D2Pak
  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Maximum Power Dissipation: 3.13W (Ta), 64W (Tc)
  • Current Continuous Drain: 2.4A (Tc) @ 25°C
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Input Capacitance: 350pF @ 25V

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