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FQB5N60TM

Part No FQB5N60TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 5A D2PAK / Trans MOSFET N-CH 600V 5A 3-Pin(2+Tab) D2PAK T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 730pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 3.13W (Ta), 120W (Tc)
Rds On (Maximum) @ Id, Vgs 2 Ohm @ 2.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D2PAK (TO-263AB)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 774722-FQB5N60TM
Popularity Medium
Supply and Demand Status Balance
Family Name FQB5N60
Introduction Date May 15, 2000
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FQB5N60TM CAD Model

Description

The Fairchild/ON Semiconductor FQB5N60TM is a N-channel MOSFET transistor with a maximum drain-source voltage of 600V and a continuous drain current of 5A @ 25°C.

  • Applications: High voltage, high-speed power switching
  • Series: QFET
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Mounting Type: SMD
  • Gate Charge (Qg): 20nC @ 10V
  • Input Capacitance (Ciss): 730pF @ 25V
  • Status: Obsolete (EOL)
  • EOL Date: Estimated

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