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Same model may have multiple batches, images only for reference.
FQB5N90TM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQB5N90TM

Part No FQB5N90TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 5.4A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1550pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.13W (Ta), 158W (Tc)
Maximum Rds On at Id,Vgs 2.3 Ohm @ 2.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 138628-FQB5N90TM
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FQB5N90TM CAD Model

Description

The Fairchild/ON Semiconductor FQB5N90TM is a high-performance N-channel MOSFET transistor.

  • Package: D2PAK (TO-263AB)
  • Maximum Power Dissipation: 3.13W (Ta), 158W (Tc)
  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current: 5.4A (Tc)
  • Applications: Power supplies, motor control, and lighting.

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Quantity Unit Price Ext. Price
24+ $2.0929 $50.2296
59+ $1.7173 $101.3207
91+ $1.6636 $151.3876
125+ $1.6099 $201.2375
161+ $1.5563 $250.5643
216+ $1.3953 $301.3848
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Availability: 8,000 pieces
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