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Same model may have multiple batches, images only for reference.
FQB6N70TM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQB6N70TM

Part No FQB6N70TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 6.2A D2PAK
Datasheet
FQB6N70TM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 700V
Continuous Drain Current at 25°C 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1400pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.13W (Ta), 142W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 3.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 204282-FQB6N70TM
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQB6N70TM CAD Model

Description

The Fairchild/ON Semiconductor MOSFET, part number 204282-FQB6N70TM, is a N-channel polarity transistor.

  • Power Dissipation: 3.13W (Ta), 142W (Tc)
  • Drive Voltage: 10V (max Rds On)
  • Drain-Source Breakdown Voltage: 700V
  • Continuous Drain Current: 6.2A (Tc) @ 25°C
  • Maximum Rds On: 1.5 Ohm @ 3.1A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 40nC @ 10V
  • Maximum Input Capacitance: 1400pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Package: D2PAK (TO-263AB)
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Limited

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166+ $2.0917 $347.2222
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