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Same model may have multiple batches, images only for reference.
FQB8N60CTM_WS Real Image
Same model may have multiple batches, images only for reference.

FQB8N60CTM_WS

Part No FQB8N60CTM_WS
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7.5A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 1255pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.13W (Ta), 147W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 3.75A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 126531-FQB8N60CTM_WS
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQB8N60CTM_WS CAD Model

Description

The Fairchild/ON Semiconductor FQB8N60CTM_WS is an N-channel MOSFET.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 7.5A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge (Max): 36nC @ 10V
  • Input Capacitance (Max): 1255pF @ 25V
  • Rds On (Max): 1.2 Ohm @ 3.75A, 10V
  • Package: D2PAK (TO-263AB)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Supply and Demand: Balanced

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