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Same model may have multiple batches, images only for reference.
FQD12N20LTF Real Image
Same model may have multiple batches, images only for reference.

FQD12N20LTF

Part No FQD12N20LTF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 9A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 21nC @ 5V
Max Input Capacitance 1080pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 55W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 4.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039685-FQD12N20LTF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQD12N20LTF CAD Model

Description

The FQD12N20LTF is an N-channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 9A
  • On-Resistance: 280mOhm @ 4.5A and 10V
  • Package: D-Pak

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