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Same model may have multiple batches, images only for reference.
FQD12N20TF Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQD12N20TF

Part No FQD12N20TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 9A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 910pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 55W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 4.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039686-FQD12N20TF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQD12N20TF CAD Model

Description

The Fairchild/ON Semiconductor FQD12N20TF is an SMD (SMT) mounting N-channel MOSFET with a drain-source breakdown voltage of 200V and a continuous drain current of 9A (Tc).

  • Mounting: SMD (SMT)
  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 9A (Tc)
  • Maximum Rds On @ Id, Vgs: 280 mOhm @ 4.5A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Input Capacitance: 910pF @ 25V
  • Max Gate Charge: 23nC @ 10V
  • Case/Package: D-Pak
  • Maximum Power Dissipation: 2.5W (Ta) and 55W (Tc)
  • Supply and Demand Status: Balanced

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