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Same model may have multiple batches, images only for reference.
FQD13N10TF Real Image
Same model may have multiple batches, images only for reference.

FQD13N10TF

Part No FQD13N10TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 10A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 450pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta), 40W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039693-FQD13N10TF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQD13N10TF CAD Model

Description

The FQD13N10TF MOSFET is an N-channel transistor manufactured by Fairchild/ON Semiconductor.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 10A @ 25°C
  • Mounting Type: SMD (SMT)
  • Maximum Power Dissipation: 2.5W (Ta) and 40W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 16nC @ 10V
  • Maximum Input Capacitance: 450pF @ 25V
  • Package Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6403 $60.8285
220+ $0.5254 $115.5880
345+ $0.5090 $175.6050
470+ $0.4926 $231.5220
610+ $0.4762 $290.4820
815+ $0.4269 $347.9235
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Availability: 4,000 pieces
MOQ: 95 pcs
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