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FQD19N10TM

Part No FQD19N10TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 15.6A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 15.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 780pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 7.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 101180-FQD19N10TM
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FQD19N10TM CAD Model

Description

The Fairchild/ON Semiconductor FQD19N10TM is an N-Channel MOSFET transistor suitable for use in various electronic applications, such as power supplies, DC-DC converters, and motor control circuits.

  • Power Dissipation: 2.5W (Ta), 50W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 15.6A (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Recovery Speed: 200mA (Io)
  • Maximum Gate-Source Voltage: ±25V
  • Package: D-Pak with two leads and a tab
  • Supply and Demand: Balanced
  • Package Quantity: 2,500

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2735 $50.9400
100+ $1.0449 $104.4900
150+ $1.0123 $151.8450
205+ $0.9796 $200.8180
265+ $0.9470 $250.9550
355+ $0.8490 $301.3950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,460 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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