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Same model may have multiple batches, images only for reference.
FQD1N60CTM Real Image
Same model may have multiple batches, images only for reference.

FQD1N60CTM

Part No FQD1N60CTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 6.2nC @ 10V
Max Input Capacitance 170pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 28W (Tc)
Maximum Rds On at Id,Vgs 11.5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 067397-FQD1N60CTM
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FQD1N60CTM CAD Model

Description

The Fairchild/ON Semiconductor FQD1N60CTM is an N-channel MOSFET transistor.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 1A @ 25°C
  • Power Dissipation: 2.5W (Ta), 28W (Tc)
  • Package: D-Pak (TO-252-3, SC-63)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 6.2nC @ 10V
  • Maximum Input Capacitance: 170pF @ 25V
  • Maximum Rds On: 11.5 Ohm @ 500mA, 10V
  • Supply and Demand: Sufficient
  • Package Quantity: 2,500 (Reel)

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.7314 $52.3884
14+ $7.1642 $100.2988
22+ $6.9403 $152.6866
30+ $6.7165 $201.4950
39+ $6.4926 $253.2114
52+ $5.8209 $302.6868
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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