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Same model may have multiple batches, images only for reference.
FQD4N20LTF Real Image
Same model may have multiple batches, images only for reference.

FQD4N20LTF

Part No FQD4N20LTF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 3.2A DPAK
Datasheet
FQD4N20LTF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 5.2nC @ 5V
Max Input Capacitance 310pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 30W (Tc)
Maximum Rds On at Id,Vgs 1.35 Ohm @ 1.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039746-FQD4N20LTF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQD4N20LTF CAD Model

Description

The FQD4N20LTF is a MOSFET transistor from Fairchild/ON Semiconductor.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current (25°C): 3.2A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 5.2nC @ 5V
  • Maximum Input Capacitance: 310pF @ 25V
  • Maximum Rds On: 1.35 Ohm @ 1.6A, 10V
  • Mounting Type: Surface Mount
  • Package: D-Pak
  • Popularity: Medium
  • Status: Obsolete (EOL)

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