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Same model may have multiple batches, images only for reference.
FQD4N20TF Real Image
Same model may have multiple batches, images only for reference.

FQD4N20TF

Part No FQD4N20TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 3A DPAK
Datasheet
FQD4N20TF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 6.5nC @ 10V
Max Input Capacitance 220pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 30W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039747-FQD4N20TF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2k pcs
Ultra Librarian 3D Model Ultra Librarian FQD4N20TF CAD Model

Description

The Fairchild/ON Semiconductor FQD4N20TF is an N-channel MOSFET that is used in various applications.

  • Mounting: SMD (SMT)
  • Packaging: Reel - TR
  • Power Dissipation: 2.5W (Ta), 30W (Tc)
  • Continuous Drain Current: 3A (Tc)
  • Maximum Rds On: 1.4 Ohm @ 1.5A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Product Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Category: Discrete Semiconductor Products
  • Supply and Demand Status: Balanced
  • Package Quantity: 2k pcs

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