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Same model may have multiple batches, images only for reference.
FQD5N30TM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQD5N30TM

Part No FQD5N30TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 4.4A DPAK
Datasheet
FQD5N30TM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 430pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 137992-FQD5N30TM
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQD5N30TM CAD Model

Description

The Fairchild/ON Semiconductor FQD5N30TM is a MOSFET N-channel polarity discrete semiconductor product.

  • Mounting Style: Surface Mount Device (SMD)
  • Case/Package: D-Pak
  • Power Dissipation: 2.5W (Ta), 45W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Drain-Source Breakdown Voltage: 300V
  • Continuous Drain Current (at 25°C): 4.4A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 13nC @ 10V
  • Maximum Input Capacitance: 430pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On (at Id,Vgs): 900 mOhm @ 2.2A, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Packaging: Reel - TR
  • Supply and Demand Status: Limited

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