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Same model may have multiple batches, images only for reference.
FQD5N60CTM Real Image
Same model may have multiple batches, images only for reference.

FQD5N60CTM

Part No FQD5N60CTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2.8A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 670pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 49W (Tc)
Maximum Rds On at Id,Vgs 2.5 Ohm @ 1.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 113912-FQD5N60CTM
Popularity Medium
Supply and Demand Status Limited
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FQD5N60CTM CAD Model

Description

The Fairchild/ON Semiconductor FQD5N60CTM is a high-performance N-channel MOSFET designed for use in power management and other applications.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 2.8A at 25°C
  • Power Dissipation: 2.5W (Ta) and 49W (Tc)
  • Operating Temperature: -55°C to 150°C
  • Package: D-Pak
  • Maximum Input Capacitance: 670pF at 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 2.5 Ohm at 1.4A, 10V
  • Packaging: Reel, 2,500 units per package

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6338 $50.7040
195+ $0.5200 $101.4000
300+ $0.5038 $151.1400
415+ $0.4875 $202.3125
535+ $0.4713 $252.1455
715+ $0.4225 $302.0875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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