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FQD6N25TM

Part No FQD6N25TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 4.4A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 8.5nC @ 10V
Max Input Capacitance 300pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 1 Ohm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 016440-FQD6N25TM
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FQD6N25TM CAD Model

Description

The Fairchild/ON Semiconductor FQD6N25TM is an N-Channel MOSFET.

  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current (Tc=25°C): 4.4A
  • Maximum Rds On (Id=2.2A, Vgs=10V): 1 Ohm
  • Gate-Source Threshold Voltage (Id=250μA): 5V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate Charge (Vgs=10V): 8.5nC
  • Maximum Input Capacitance (Vds=25V): 300pF
  • Drive Voltage: 10V
  • Case/Package: D-Pak (TO-252-3, DPak (2 Leads + Tab), SC-63)
  • Application: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3128 $57.8680
455+ $0.2566 $116.7530
700+ $0.2487 $174.0900
960+ $0.2407 $231.0720
1,245+ $0.2326 $289.5870
1,665+ $0.2086 $347.3190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 370 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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