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Same model may have multiple batches, images only for reference.
FQD6P25TM Real Image
Same model may have multiple batches, images only for reference.

FQD6P25TM

Part No FQD6P25TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 250V 4.7A DPAK
Datasheet
FQD6P25TM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 780pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 55W (Tc)
Maximum Rds On at Id,Vgs 1.1 Ohm @ 2.35A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 138806-FQD6P25TM
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQD6P25TM CAD Model

Description

The Fairchild/ON Semiconductor FQD6P25TM is a P-channel MOSFET technology-based discrete semiconductor product with a D-Pak case/package.

  • Maximum Power Dissipation: 2.5W (Ta), 55W (Tc)
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current (Tc=25°C): 4.7A
  • Gate-Source Threshold Voltage (Id=250μA): 5V
  • Maximum Gate Charge (Vgs=10V): 27nC
  • Maximum Input Capacitance (Vds=25V): 780pF
  • Maximum Rds On (Id=2.35A, Vgs=10V): 1.1 Ohm
  • Temperature Range: -55°C to 150°C (TJ)
  • Lifecycle Status: Obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5311 $58.4210
270+ $0.4358 $117.6660
415+ $0.4222 $175.2130
570+ $0.4086 $232.9020
735+ $0.3950 $290.3250
980+ $0.3541 $347.0180
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Availability: 1,000 pieces
MOQ: 110 pcs
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