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Same model may have multiple batches, images only for reference.
FQI4N20 Real Image
Same model may have multiple batches, images only for reference.

FQI4N20

Part No FQI4N20
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series QFET™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 220 pF @ 25 V
Power Dissipation (Max) 3.13W (Ta), 45W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 950 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 592708-FQI4N20
Ultra Librarian 3D Model Ultra Librarian FQI4N20 CAD Model

Description

The 592708-FQI4N20 is a single N-channel MOSFET transistor from the QFET™ series.

  • Drain-to-Source Voltage: 200V
  • Continuous Drain Current (@ 25°C): 3.6A
  • On-Resistance (Max @ 1.8A, 10V): 1.4Ohm
  • Temperature Range: -55°C to 150°C
  • Mounting: Through-hole
  • Package: TO-262-3 Long Leads, I²Pak
  • Product Status: Active
  • Common Use: Power management and switching applications

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