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Same model may have multiple batches, images only for reference.
FQI4N20LTU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQI4N20LTU

Part No FQI4N20LTU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 3.8A I2PAK / Trans MOSFET N-CH 200V 3.8A 3-Pin(3+Tab) I2PAK Rail
Datasheet
FQI4N20LTU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 200V
Current - Continuous Drain (Id) @ 25°C 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 5.2nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 310pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 3.13W (Ta), 45W (Tc)
Rds On (Maximum) @ Id, Vgs 1.35 Ohm @ 1.9A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package I2PAK
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 774743-FQI4N20LTU
Popularity Medium
Supply and Demand Status Limited
Family Name FQI4N20L
Introduction Date December 22, 2000
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FQI4N20LTU CAD Model

Description

The 774743-FQI4N20LTU is a MOSFET technology-based product from Fairchild/ON Semiconductor.

  • Current-Continuous Drain: 3.8A (Tc)
  • Supply and Demand Status: Limited
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Mounting: Through-hole
  • Gate Charge (Qg) (maximum) @ Vgs: 5.2nC @ 5V
  • Drain-Source Voltage: 200V
  • Input Capacitance (Ciss) (maximum) @ Vds: 310pF @ 25V
  • EOL Date: Obsolete/End of life

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