The FDW9926A_NL is a dual N-Channel PowerTrench® MOSFET from Fairchild Semiconductor (now ON Semiconductor). It's designed for battery management and load switching in portable devices where space is critical. This MOSFET integrates two N-channel MOSFETs in a single package, offering a compact and efficient solution.

Applications:

• Battery management
• Load switching
• Power management in portable devices (smartphones, tablets, laptops)
• DC-DC converters

Features:

• 30V Drain-Source Voltage (VDS)
• 6A Continuous Drain Current (ID) per channel
• Low RDS(on)
• Low gate charge (Qg)
• SO-8 package
• RoHS Compliant

Benefits:

• High efficiency: Low RDS(on) minimizes power loss and increases efficiency.
• Compact design: SO-8 package saves board space by integrating two MOSFETs.
• Extended battery life: Low gate charge reduces switching losses, extending battery life.
• Improved thermal performance: Optimized thermal characteristics for reliable operation.
• Reduced component count: Integration of two MOSFETs reduces the number of components on the board.

Technical Specifications:

The FDW9926A_NL has a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 6A per channel. The typical drain-source on-resistance (RDS(on)) at VGS = 10V is 0.028 Ohms, and 0.045 Ohms at VGS = 4.5V. The gate-source voltage (VGS) is rated at ±20V. The total gate charge (Qg) is typically 12 nC. It is available in an SO-8 package.

This dual N-Channel MOSFET is an excellent choice for compact battery management and load switching applications. Its low on-resistance and gate charge minimize power losses, and the integrated design saves valuable board space in portable devices.