The NP40N10VDF-E1-AY is a N-Channel MOSFET transistor designed for use in discrete semiconductor applications. It has a drain to source voltage (Vdss) of 100V and can handle a continuous drain current (Id) of 40A @ 25°C.

• Channel Type: N-Channel
• Application: Discrete Semiconductor
• Drain to Source Voltage (Vdss): 100V
• Continuous Drain Current (Id): 40A @ 25°C
• On-Resistance (Rds On): 26mOhm @ 20A and 10V gate-source voltage (Vgs)
• Gate Threshold Voltage (Vgs(th)): 2.5V @ 250µA
• Power Dissipation: 1.2W (Ta) and 120W (Tc)
• Mounting Type: Surface Mount
• Package: TO-252-3
• Gate Charge (Qg): 71nC @ 10V gate-source voltage (Vgs)
• Input Capacitance (Ciss): 3150pF @ 25V drain-source voltage (Vds)
• Maximum Gate-Source Voltage (Vgs): ±20V
• Operating Temperature Range: Up to 175°C
• Manufacturer: Renesas Electronics America