The FQI4N90TU is an N-channel MOSFET manufactured by Fairchild/ON Semiconductor. It has a status of active and is mounted using through-hole technology.

• Power Dissipation: 3.13W (Ta), 140W (Tc)
• Drive Voltage: 10V (Max Rds On, Min Rds On)
• Operating Temperature: -55°C to 150°C (TJ)
• Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
• Drain-Source Breakdown Voltage: 900V
• Continuous Drain Current: 4.2A (Tc) @ 25°C
• Gate-Source Threshold Voltage: 5V @ 250μA
• Gate Charge (Max): 30nC @ 10V
• Input Capacitance (Max): 1100pF @ 25V
• Gate-Source Voltage (Max): ±30V
• Rds On (Max): 3.3 Ohm @ 2.1A, 10V
• Package: 1k pcs