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Same model may have multiple batches, images only for reference.
FQI8N60C Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQI8N60C

Part No FQI8N60C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7.5A I2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 1255pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.13W (Ta), 147W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 3.75A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK (TO-262)
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 040344-FQI8N60C
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQI8N60C CAD Model

Description

The Fairchild/ON Semiconductor FQI8N60C MOSFET is a versatile and reliable component suitable for various applications.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current (25°C): 7.5A
  • Rds On: 1.2 Ohm @ 3.75A, 10V
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Gate-Source Voltage (Max): ±30V
  • Input Capacitance (Max): 1255pF @ 25V
  • Gate Charge (Max): 36nC @ 10V
  • Operating Temperature: -55°C to 150°C
  • Packaging: Tube/Rail
  • Ideal for: Power supplies, motor control, and lighting systems

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $22.5699 $67.7097
7+ $18.5181 $129.6267
10+ $17.9395 $179.3950
14+ $17.3608 $243.0512
18+ $16.7822 $302.0796
24+ $15.0462 $361.1088
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Availability: 8,500 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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