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Same model may have multiple batches, images only for reference.
FQP11N50CF Real Image
Same model may have multiple batches, images only for reference.

FQP11N50CF

Part No FQP11N50CF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 11A TO-220
Datasheet
FQP11N50CF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 2055pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 195W (Tc)
Maximum Rds On at Id,Vgs 550 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 067417-FQP11N50CF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQP11N50CF CAD Model

Description

The Fairchild/ON Semiconductor 067417-FQP11N50CF is a N-Channel MOSFET.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 11A (Tc) @ 25°C
  • Maximum Power Dissipation: 195W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 550 mOhm @ 5.5A, 10V
  • Package: TO-220-3
  • Mounting: Through Hole
  • Category: Discrete Semiconductor Product
  • Popularity: Medium

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