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FQP18N50V2

Part No FQP18N50V2
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 18A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 3290pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 208W (Tc)
Maximum Rds On at Id,Vgs 265 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 204299-FQP18N50V2
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian FQP18N50V2 CAD Model

Description

The FQP18N50V2 is a single N-channel MOSFET transistor from Fairchild/ON Semiconductor. It is a high-performance device that is commonly used in power management applications.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 18A
  • Package: TO-220-3
  • Packaging: Tube/Rail
  • Supply and Demand: Balanced
  • Applications: Power management and industrial applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6218 $52.8530
200+ $0.5102 $102.0400
305+ $0.4943 $150.7615
420+ $0.4784 $200.9280
545+ $0.4624 $252.0080
725+ $0.4146 $300.5850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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