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Same model may have multiple batches, images only for reference.
FQP33N10L Real Image
Same model may have multiple batches, images only for reference.

FQP33N10L

Part No FQP33N10L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 33A TO-220
Datasheet
FQP33N10L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 40nC @ 5V
Max Input Capacitance 1630pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 127W (Tc)
Maximum Rds On at Id,Vgs 52 mOhm @ 16.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1039845-FQP33N10L
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQP33N10L CAD Model

Description

The 426231 is an N-channel MOSFET manufactured by Fairchild/ON Semiconductor with a maximum power dissipation of 127W (Tc).

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 33A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 40nC @ 5V
  • Maximum Rds on: 52 mOhm @ 16.5A, 10V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-220-3
  • Suitable For: Use in discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.0855 $60.5130
14+ $8.2756 $115.8584
22+ $8.0169 $176.3718
30+ $7.7581 $232.7430
39+ $7.5006 $292.5234
52+ $6.7244 $349.6688
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 75 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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