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Same model may have multiple batches, images only for reference.
FQPF34N20L Real Image
Same model may have multiple batches, images only for reference.

FQPF34N20L

Part No FQPF34N20L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 17.5A TO-220F
Datasheet
FQPF34N20L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 72nC @ 5V
Max Input Capacitance 3900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 55W (Tc)
Maximum Rds On at Id,Vgs 75 mOhm @ 8.75A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 067458-FQPF34N20L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQPF34N20L CAD Model

Description

The Fairchild/ON Semiconductor FQPF34N20L is an N-Channel MOSFET that belongs to the MOSFET family of discrete semiconductor products.

  • Package: TO-220F
  • Drain-Source Breakdown Voltage: 200V
  • Power Dissipation: 55W
  • Continuous Drain Current: 17.5A
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Max Rds On: 75 mOhm @ 8.75A, 10V
  • Supply and Demand: Balanced

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