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Same model may have multiple batches, images only for reference.
FQPF4N20L Real Image
Same model may have multiple batches, images only for reference.

FQPF4N20L

Part No FQPF4N20L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 200V LOGIC N-Channel MOSFET
Datasheet
FQPF4N20L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 200V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 5.2nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 310pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 27W (Tc)
Rds On (Maximum) @ Id, Vgs 1.35 Ohm @ 1.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220F
Package TO-220-3 Full Pack
Win Source Part Number 1175480-FQPF4N20L
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name FQPF4N20L
Introduction Date December 22, 2000
ECCN EAR99
Country of Origin China, Republic of Korea
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian FQPF4N20L CAD Model

Description

The Fairchild/ON Semiconductor FQPF4N20L is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Voltage (Maximum): 200V
  • Continuous Drain Current: 3A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Gate Charge (Maximum): 5.2nC @ 5V
  • Input Capacitance (Maximum): 310pF @ 25V
  • Package: TO-220F
  • Operating Temperature: -55°C to 150°C (TJ)
  • Supply and Demand Status: Limited
  • Product Status: Obsolete (EOL)
  • Alternative Parts: RCX081N20, SiHF610, IRF610
  • Manufacturer: Fairchild/ON Semiconductor

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