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Same model may have multiple batches, images only for reference.
FQPF4N90C Real Image
Same model may have multiple batches, images only for reference.

FQPF4N90C

Part No FQPF4N90C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 4A TO-220F
Datasheet
FQPF4N90C Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 960pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 47W (Tc)
Maximum Rds On at Id,Vgs 4.2 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 016467-FQPF4N90C
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQPF4N90C CAD Model

Description

The Fairchild/ON Semiconductor 016467-FQPF4N90C is a N-channel MOSFET in a TO-220F package.

  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current: 4A @ 25°C
  • Maximum Rds On: 4.2 Ohm @ 2A, 10V
  • Temperature Range: -55°C to 150°C
  • Power Dissipation: 47W (Tc)
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 22nC @ 10V
  • Maximum Input Capacitance: 960pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2937 $51.7480
95+ $1.0615 $100.8425
150+ $1.0283 $154.2450
205+ $0.9951 $203.9955
260+ $0.9620 $250.1200
350+ $0.8625 $301.8750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 37,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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