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Same model may have multiple batches, images only for reference.
FQPF4N90CT Real Image
Same model may have multiple batches, images only for reference.

FQPF4N90CT

Part No FQPF4N90CT
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 900V N-Channel MOSFET
Datasheet
FQPF4N90CT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 900V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 22nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 960pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 47W (Tc)
Rds On (Maximum) @ Id, Vgs 4.2 Ohm @ 2A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220F
Package TO-220-3 Full Pack
Win Source Part Number 1175483-FQPF4N90CT
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name FQPF4N90C
Introduction Date June 26, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQPF4N90CT CAD Model

Description

The FQPF4N90CT is a N-channel MOSFET transistor, part of the QFET series, manufactured by Fairchild/ON Semiconductor.

  • Package: TO-220-3 Full Pack
  • Maximum Continuous Drain Current (25°C): 4A
  • Drain-Source Voltage: 900V
  • Gate Charge (10V): 22nC
  • Maximum Power Dissipation (Tc): 47W
  • Supply and Demand Status: Limited
  • Package: Tube (1k pcs)

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