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FQPF65N06

Part No FQPF65N06
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 40A TO-220F
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 2410pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 56W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 1006694-FQPF65N06
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQPF65N06 CAD Model

Description

The FQPF65N06 is an N-Channel MOSFET manufactured by Fairchild/ON Semiconductor. It is designed for high-speed switching applications with a low on-resistance, making it suitable for various power management and switching circuits. This MOSFET is commonly used in applications where efficiency and reliability are critical.

Applications:

  • Switch-mode power supplies (SMPS)
  • DC-DC converters
  • Motor control
  • Uninterruptible power supplies (UPS)
  • Power inverters

Features:

  • N-Channel MOSFET
  • Low on-resistance (RDS(on))
  • High-speed switching
  • Avalanche energy rated
  • High current capability
  • Easy to drive

Benefits:

  • Improved efficiency due to low RDS(on)
  • Reduced power dissipation
  • Enhanced thermal performance
  • Reliable operation in demanding conditions
  • Simplified drive circuitry
  • Suitable for high-frequency applications

Additional Details:

The FQPF65N06's low on-resistance minimizes conduction losses, contributing to higher overall efficiency in power conversion circuits. Its fast switching speeds enable it to be used effectively in high-frequency applications. The avalanche energy rating enhances its robustness and ability to withstand transient voltage conditions. The MOSFET's easy-to-drive characteristics simplify the design and implementation process.

This MOSFET is designed to meet the requirements of modern power management systems, offering a balance of performance, efficiency, and reliability. It is commonly used in applications where minimizing power loss and maximizing efficiency are critical design considerations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5856 $58.5600
245+ $0.4805 $117.7225
375+ $0.4655 $174.5625
515+ $0.4505 $232.0075
665+ $0.4354 $289.5410
890+ $0.3904 $347.4560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 300,000 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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