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Same model may have multiple batches, images only for reference.
BSS63AHZGT116 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

BSS63AHZGT116

Part No BSS63AHZGT116
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 0.1A SST3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 25mA, 1V
Power - Max 200 mW
Frequency - Transition 200MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SST3
Base Product Number BSS63
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1377231-BSS63AHZGT116
Ultra Librarian 3D Model Ultra Librarian BSS63AHZGT116 CAD Model

Description

The BSS63AHZGT116 is a PNP bipolar transistor from Rohm Semiconductor.

  • Series: Automotive, AEC-Q101
  • Package: TO-236-3, SC-59, SOT-23-3
  • Maximum Collector Current: 100 mA
  • Maximum Collector-Emitter Breakdown Voltage: 100 V
  • DC Current Gain: 30 @ 25mA and 1V
  • Vce Saturation: 500mV @ 10mA and 100mA
  • Collector Cutoff Current: 100nA
  • Transition Frequency: 200MHz
  • Maximum Power Dissipation: 200mW

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