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Same model may have multiple batches, images only for reference.
FQPF6N70 Real Image
Same model may have multiple batches, images only for reference.

FQPF6N70

Part No FQPF6N70
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 3.5A TO-220F
Datasheet
FQPF6N70 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 700V
Continuous Drain Current at 25°C 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1400pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 48W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 1.75A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 204316-FQPF6N70
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQPF6N70 CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a N-Channel power MOSFET with a drain-source breakdown voltage of 700V and a continuous drain current of 3.5A at 25°C.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 700V
  • Continuous Drain Current (25°C): 3.5A
  • Maximum Rds On (Id, Vgs): 1.5 Ohm @ 1.75A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Package: TO-220F
  • Mounting Type: Through Hole
  • Power Dissipation (Max): 48W (Tc)
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate Charge: 40nC @ 10V
  • Maximum Input Capacitance: 1400pF @ 25V
  • Temperature Range: -55°C to 150°C (TJ)

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