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FQPF7N10

Name: FQPF7N10
Brand: Fairchild/ON Semiconductor
SKU: 872249
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	FQPF7N10
Manufacturer	Fairchild/ON Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 100V 5.5A TO220F / N-Channel 100 V 5.5A (Tc) 23W (Tc) Through Hole TO-220F-3
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Fairchild/ON Semiconductor
Series	QFET®
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	350mOhm @ 2.75A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.5 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 25 V
Power Dissipation (Max)	23W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220F-3
Package / Case	TO-220-3 Full Pack
Standard Package	1 pcs
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	872249-FQPF7N10
Ultra Librarian 3D Model	Ultra Librarian FQPF7N10 CAD Model

Alternative Products

Description

The FQPF7N10 is a N-Channel MOSFET transistor from the QFET™ series. It is designed for various switching and amplification applications.

Channel Type: N-Channel
Series: QFET™
Drain-Source Voltage: 100V
Continuous Drain Current: 5.5A @ 25°C
On-Resistance (Rds On): 350mOhm @ 2.75A, 10V
Gate Threshold Voltage (Vgs(th)): 4V @ 250μA
Power Dissipation: 23W @ 25°C
Package: TO-220-3 Full Pack
Mounting Type: Through-Hole
Gate Charge (Qg): 7.5nC @ 10V
Input Capacitance (Ciss): 250pF @ 25V
Operating Temperature: -55°C to 175°C

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