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ZTX601STZ

Part No ZTX601STZ
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 160V 1A E-LINE
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging AMMO PACKAGE
Status Active
Transistor Polarity NPN - Darlington
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 160V
Max Vce (sat) 1.2V @ 10mA, 1A
Collector Cut-off Current(Max) 10μA
Typical Gain (hFE) (Min) 2000 @ 500mA, 10V
Maximum Power Dissipation 1W
Frequency - Transition 250MHz
Temperature Range - Operating -55°C to 200°C (TJ)
Mounting Through Hole
Case / Package E-Line (TO-92 compatible)
Win Source Part Number 413581-ZTX601STZ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZTX601STZ CAD Model

Description

Introducing the ZTX601STZ from Diodes Incorporated

The ZTX601STZ is a premium-grade bipolar transistor from Diodes Incorporated, designed to facilitate efficient switching and amplification in electronic circuits. This device embodies the cutting-edge technology that Diodes Incorporated is renowned for, offering high reliability and performance for a wide range of applications.

The ZTX601STZ is a PNP transistor that comes in a convenient SOT-223 package, which not only ensures a compact footprint on the PCB but also provides excellent power dissipation characteristics. With its robust design, this transistor is capable of handling continuous collector currents up to 1A, making it suitable for medium power applications.

One of the key features of the ZTX601STZ is its high gain-bandwidth product, which is typically 75MHz. This makes it an excellent choice for applications requiring high-speed switching. Additionally, the device boasts a low saturation voltage, ensuring efficient operation and reduced power losses during switching events.

The ZTX601STZ also offers a wide range of collector-emitter voltages, up to -160V, providing the flexibility needed to accommodate various circuit designs and voltage requirements. Its high breakdown voltage ensures that the device can withstand transient voltage spikes without sustaining damage, thus enhancing its durability and lifespan.

Designed with thermal performance in mind, the ZTX601STZ can operate within a junction temperature range of -55°C to +150°C. This wide operating temperature range makes it suitable for challenging environmental conditions, ensuring consistent performance even under thermal stress.

Applications for the ZTX601STZ are diverse and include but are not limited to power management, motor control, audio amplifiers, and signal processing. Its reliability and efficiency make it a go-to choice for designers and engineers looking to create high-performance electronic systems.

In summary, the ZTX601STZ from Diodes Incorporated is a versatile and robust PNP transistor that offers excellent electrical characteristics for a variety of medium power applications. Its compact SOT-223 package, high-speed switching capabilities, and strong thermal performance make it an ideal component for modern electronic designs.

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