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NSVMMBT5551M3T5G

Part No NSVMMBT5551M3T5G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description NSVMMBT5551 - HIGH VOLTAGE NPN B  /  Bipolar (BJT) Transistor NPN 160 V 60 mA 265 mW Surface Mount SOT-723
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Series Automotive, AEC-Q101
Package Bulk
Transistor Type NPN
Current - Collector (Ic) (Max) 60 mA
Voltage - Collector Emitter Breakdown (Max) 160 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Power - Max 265 mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case SOT-723
Supplier Device Package SOT-723
MSL Level Vendor Undefined
REACH Status REACH Unaffected
Other Names 2156-NSVMMBT5551M3T5G-488
Standard Package 1
Win Source Part Number 1123734-NSVMMBT5551M3T5G
Ultra Librarian 3D Model Ultra Librarian NSVMMBT5551M3T5G CAD Model

Description

The NSVMMBT5551M3T5G is a high-performance NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor. This semiconductor device is engineered to cater to a wide array of electronic applications, particularly where efficiency and reliability are of paramount importance.

Key Features

  • High Current Handling: With a collector current rating of up to 600 mA, this transistor is capable of handling high current applications, making it suitable for power management circuits.
  • Low Voltage Operation: Operating at a collector-emitter voltage (VCEO) of 160V, the NSVMMBT5551M3T5G is designed for low voltage operations, which helps in reducing power consumption and improving energy efficiency.
  • High Transition Frequency: It boasts a high transition frequency (fT) of 100 MHz, which allows for excellent amplification of high-speed signals, making it ideal for high-frequency applications.
  • Robust Thermal Performance: The device is encapsulated in a SOT-23 package, which not only saves space due to its compact footprint but also offers superior thermal performance, ensuring stability under varying operational conditions.
  • Automotive Grade Quality: As part of ON Semiconductor's automotive-grade product offerings, the NSVMMBT5551M3T5G meets stringent quality and reliability standards, suitable for automotive and industrial applications.

Applications

The NSVMMBT5551M3T5G is versatile and can be used in a variety of circuits. Some common applications include:

  • Signal Amplification
  • Switching Circuits
  • Power Management Solutions
  • Audio Amplifiers
  • Driver Stages in Hi-Fi Amplifiers
  • Automotive and Industrial Electronics

Environmental and Regulatory Compliance

ON Semiconductor is committed to environmental stewardship. The NSVMMBT5551M3T5G complies with RoHS (Restriction of Hazardous Substances) regulations, ensuring that it is free from harmful substances such as lead, mercury, and cadmium. This compliance underscores the company's dedication to producing environmentally friendly and sustainable products.

Conclusion

The NSVMMBT5551M3T5G from ON Semiconductor stands out as a reliable and efficient solution for a wide range of electronic applications. Its combination of high current handling, low voltage operation, high transition frequency, and robust thermal performance, all within an automotive-grade quality package, makes it an excellent choice for designers looking to optimize their electronic designs for performance and reliability.

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