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BFN38H6327XTSA1

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Part No	BFN38H6327XTSA1
Manufacturer	Infineon Technologies
Catalog	RF Transistors (BJT)
Description	TRANS NPN 300V 0.2A SOT223-4 / Bipolar (BJT) Transistor NPN 300 V 200 mA 70MHz 1.5 W Surface Mount PG-SOT223-4
Datasheet	BFN38H6327XTSA1 Datasheet
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr	Infineon Technologies
Package	Tape & Reel (TR)
Product Status	Not For New Designs
Transistor Type	NPN
Current - Collector (Ic) (Max)	200 mA
Voltage - Collector Emitter Breakdown (Max)	300 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 2mA, 20mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 30mA, 10V
Power - Max	1.5 W
Frequency - Transition	70MHz
Temperature Range - Operating	150°C (TJ)
Mounting	SMD (SMT)
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	PG-SOT223-4
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0075
Other Names	BFN 38 H6327,BFN 38 H6327-ND,IFEINFBFN38H6327XTSA1,SP000748530,2156-BFN38H6327XTSA1-ITTR
Standard Package	1,000
Win Source Part Number	971593-BFN38H6327XTSA1
Ultra Librarian 3D Model	Ultra Librarian BFN38H6327XTSA1 CAD Model

Alternative Products

Description

The Infineon Technologies BFN38H6327XTSA1 is an NPN bipolar transistor that has a maximum collector-emitter breakdown voltage of 300V and a maximum collector current of 200mA. Bold the product name (e.g., BAV99S,135 → BFN38H6327XTSA1) and manufacturer (e.g., Nexperia USA Inc. → Infineon Technologies).

Maximum Collector-Emitter Breakdown Voltage: 300V
Maximum Collector Current: 200mA
Power Dissipation: 1.5W
DC Current Gain (hFE): 30 @ 30mA and 10V
Frequency Transition: 70MHz
Package: TO-261-4, TO-261AA

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