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SI7842DP-T1-GE3

Part No SI7842DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 6.3A 8-Pin PowerPAK SO T/R / MOSFET 2N-CH 30V 6.3A PPAK SO-8
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.3A
Maximum Rds On at Id,Vgs 22 mOhm @ 7.5A, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 20nC @ 10V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 1096201-SI7842DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name Si7842DP
Introduction Date May 22, 2001
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI7842DP-T1-GE3 CAD Model

Description

The Vishay SI7842DP-T1-GE3 is a dual N-channel logic level gate FET.

  • Channel Type: Dual N-Channel
  • Gate Type: Logic Level Gate
  • Power Dissipation: 1.4W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 6.3A @ 25°C
  • Gate-Source Threshold Voltage: 2.4V @ 250μA
  • Maximum Gate Charge: 20nC @ 10V
  • Maximum Rds On: 22 mOhm @ 7.5A, 10V
  • Package: PowerPAK SO-8 dual
  • Mounting: SMD (SMT)
  • Applications: Automotive, Communication and Networking, Consumer Electronics, Industrial, Sensing and Instrumentation

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2532 $62.6600
115+ $1.0291 $118.3465
175+ $0.9968 $174.4400
240+ $0.9644 $231.4560
310+ $0.9321 $288.9510
415+ $0.8362 $347.0230
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,680 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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